An atomic hydrogen etching sensor for H₂ plasma diagnostics

A simple and selective new technique for atomic hydrogen flux measurements in a plasma environment is introduced demonstrated this work. This works by measuring the etching rate of an amorphous carbon film translating to incoming radical through well-defined etch yield per radical. Ions present have much higher than radicals do. For that reason, suppression ion toward crucial ensure observed dominated etching. It can be achieved using cylindrical pipe (hereinafter “chimney”) which bend enforce ion–wall collisions, neutralizing ions. The chimney made out Macor, material with low catalytic surface activity, preserve while effectively suppressing Ultimately, sensor deployed radio frequency inductively coupled operated at pressure (1–10 Pa). Atomic fluxes are measured compared heat vacuum ultraviolet absorption spectroscopy same setup. All sensors agreed within factor 4 range 1019 1021 m−2 s−1.